US Patent Issued to ROHM on Sept. 22 for "Nitride semiconductor device and manufacturing method therefor" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,437, issued on Sept. 22, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Nitride semiconductor device and manufacturing method therefor" was invented by Hirotaka Otake (Kyoto, Japan), Manabu Yanagihara (Kyoto, Japan), Kazuya Nagase (Kyoto, Japan) and Shinya Takado (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes a source electrode that is in contact with a second nitride semiconductor layer via a first opening portion and with which a portion is formed above a passivation film and a drain electrode that is in contact with the second nitride semiconductor layer via a second opening portion and with ...