ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,309, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device and method for manufacturing same" was invented by Bungo Tanaka (Kyoto, Japan) and Keiji Wada (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a lower insulating film that is formed on the substrate, a resistor that is formed on the lower insulating film, and an upper insulating film that is formed on the lower insulating film such as to cover the resistor. The lower insulating film includes a first nitride film and a first SiO-based insulating film that is formed on the first nitride film and the upper i...