US Patent Issued to ROHM on Nov. 3 for "Nitride semiconductor device and method for manufacturing nitride semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,341, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Nitride semiconductor device and method for manufacturing nitride semiconductor device" was invented by Yosuke Hata (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes an electron transit layer composed of a nitride semiconductor, an electron supply layer formed on the electron transit layer and composed of a nitride semiconductor having a band gap that is larger than that of the electron transit layer, a gate layer formed on the electron supply layer and composed of a nitride semiconductor including an acceptor impurity, a gate elec...