US Patent Issued to ROHM on May 19 for "Semiconductor device including memory structure arranged adjacent to planar gate structure" (Japanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,188, issued on May 19, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device including memory structure arranged adjacent to planar gate structure" was invented by Yasunobu Hayashi (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor layer having a main surface; a first-conduction-type well region formed on a surface portion of the main surface of the semiconductor layer; a second-conduction-type first region formed on a surface portion of the well region; a second-conduction-type second region formed on the surface portion of the well region at an interval from the first region; ...