ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,253, issued on March 24, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device and method of manufacturing the same" was invented by Shogo Ogawa (Ukyo-ku, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor device including: an n-type semiconductor substrate having a first main surface and a second main surface on an opposite side of the first main surface; an n-type semiconductor layer arranged on the first main surface of the semiconductor substrate; a pair of trenches formed at a distance from each other on a surface of the semiconductor layer on an opposite side of the semiconductor substrate; a ...