US Patent Issued to ROHM on March 17 for "SiC semiconductor device, and manufacturing method therefor" (Japanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,708, issued on March 17, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"SiC semiconductor device, and manufacturing method therefor" was invented by Shingo Ota (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing an SiC semiconductor device includes a step of setting, on a main surface of an SiC wafer, a scheduled cutting line that demarcates a plurality of chip regions including a first chip region in which a functional device is formed and a second chip region in which a monitor pattern for performing process control of the first chip region is formed, a step of forming, on the main surface, a plurality of main ...