US Patent Issued to ROHM on March 17 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,700, issued on March 17, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device" was invented by Yuki Nakano (Kyoto, Japan) and Ryota Nakamura (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer made of a wide bandgap semiconductor and including a gate trench; a gate insulating film formed on the gate trench; and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film. The semiconductor layer includes a first conductivity type source region; a second conductivity type body region; a first conductivity type drift...