US Patent Issued to ROHM on June 23 for "SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,884, issued on June 23, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" was invented by Noriyuki Masago (Kyoto, Japan), Takuji Maekawa (Kyoto, Japan), Mitsuru Morimoto (Kyoto, Japan) and Takayasu Oka (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate (1) includes: an SiC single crystal substrate (10SB), a first graphene layer (11GR1) disposed on an Si plane of the SiC single crystal substrate 10SB; an SiC epitaxial growth layer (12RE) formed above the SiC single crystal substrate via the first graphene layer; and a second graphen...