US Patent Issued to ROHM on July 28 for "SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,508, issued on July 28, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate" was invented by Makoto Takamura (Kyoto, Japan), Takuji Maekawa (Kyoto, Japan), Mitsuru Morimoto (Kyoto, Japan), Noriyuki Masago (Kyoto, Japan) and Takayasu Oka (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate disclosed herein includes: an SiC single crystal substrate; a graphene layer disposed on an Si plane of the SiC single crystal substrate; an SiC epitaxial growth layer disposed above the SiC single crystal substrate via the graphene layer; and a polycr...