US Patent Issued to ROHM on July 21 for "Group III nitride semiconductor device with first and second conductive layers" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,217, issued on July 21, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Group III nitride semiconductor device with first and second conductive layers" was invented by Kentaro Chikamatsu (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided with, a group-III nitride semiconductor layered structure that includes a heterojunction, an insulating layer which has a gate opening that reaches the group-III nitride semiconductor layered structure and which is disposed on the group-III nitride semiconductor layered structure, a gate insulating film that covers the bottom and the side of the gate opening, a gate electr...