US Patent Issued to ROHM on April 7 for "Silicon carbide semiconductor device with trench gate and dummy gate source structures" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,771, issued on April 7, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Silicon carbide semiconductor device with trench gate and dummy gate source structures" was invented by Seigo Mori (Kyoto, Japan), Kenji Yamamoto (Kyoto, Japan), Hiroaki Shiraga (Kyoto, Japan), Yuki Nakano (Kyoto, Japan) and Masaya Ueno (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC semiconductor device includes SiC chip having main surface that includes first surface, second surface hollowed in thickness direction at first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defi...