US Patent Issued to ROBERT BOSCH on July 14 for "Vertical field effect transistor including channel having GaN and AIGaN regions" (German Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,801, issued on July 14, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical field effect transistor including channel having GaN and AIGaN regions" was invented by Jens Baringhaus (Sindelfingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field effect transistor. The vertical field effect transistor includes a trench structure having a first side and a second side opposite the first side. A field effect transistor (FET) channel is formed at the first side, and the second side is free of a FET channel. The FET channel includes a gallium nitride (GaN) region and an aluminum gallium nitride (AlGaN) region adjacent th...