US Patent Issued to ROBERT BOSCH on Aug. 11 for "Transistor arrangement and method for producing a transistor with a fin structure" (German Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,664, issued on Aug. 11, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Transistor arrangement and method for producing a transistor with a fin structure" was invented by Daniel Krebs (Aufhausen, Germany) and Jens Baringhaus (Sindelfingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor arrangement for power transistors with a fin structure. It is provided to lower the epitaxy layer of the transistor arrangements in an edge region surrounding the fin structure and to introduce shield implants and edge implants into the epitaxy layer after lowering."

The patent was filed on Oct. 13, 2023, under Application No. 18/486,379...