US Patent Issued to ROBERT BOSCH on April 21 for "Vertical field-effect transistor and method for its formation" (German Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,577, issued on April 21, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany).

"Vertical field-effect transistor and method for its formation" was invented by Jens Baringhaus (Sindelfingen, Germany) and Joachim Rudhard (Leinfelden-Echterdingen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field-effect transistor. The vertical field-effect transistor includes: a drift region, a semiconductor fin on or above the drift region, and a source/drain electrode on or above the semiconductor fin. The semiconductor fin includes at least one concave side wall in the region between the drift region and the source/drain electrode."

The pa...