US Patent Issued to Resonac on July 21 for "SiC ingot and SiC wafer" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,947, issued on July 21, was assigned to Resonac Corp. (Tokyo).

"SiC ingot and SiC wafer" was invented by Yoshitaka Nishihara (Chichibu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC ingot includes a seed crystal and a single crystal grown on the seed crystal, wherein the single crystal has therein a micropipe passing through the single crystal in a growth direction, and when photoluminescence observation is performed on a plurality of wafers cut out from the single crystal in a direction intersecting the growth direction, an S/N ratio of the micropipe in a first wafer cut out of the plurality of wafers, which is closest to the seed crys...