US Patent Issued to Resonac on Aug. 4 for "SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,698,573, issued on Aug. 4, was assigned to Resonac Corp. (Tokyo).

"SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer" was invented by Kensho Tanaka (Tokyo), Rimpei Kindaichi (Tokyo) and Marie Ohuchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC epitaxial wafer according to the present embodiment includes: a SiC substrate; and a SiC epitaxial layer laminated on the SiC substrate, in which a carrier concentration uniformity of the SiC epitaxial layer is less than 3.8%, and the carrier concentration uniformity is a value obtained by dividing, by an average value, a difference between a maximum value and a minimum value of ca...