US Patent Issued to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on Oct. 27 for "Space-free vertical field effect transistor including active layer having vertically grown crystal grains" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,678, issued on Oct. 27, was assigned to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon, South Korea).

"Space-free vertical field effect transistor including active layer having vertically grown crystal grains" was invented by Hyung Koun Cho (Suwon, South Korea), Sung Hyeon Jung (Hwaseong, South Korea), Young Been Kim (Ansan, South Korea), Dong Su Kim (Yongin, South Korea) and Ji Sook Yang (Suwon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical field effect transistor according to an embodiment of the present invention does not require a spacer and, accordingly, remarkably alleviates the problem that electric char...