ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,575, issued on May 12, was assigned to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon, South Korea).
"Resistive switching memory device including dual active layer and array including the same" was invented by Hyung Koun Cho (Suwon, South Korea), Dong Su Kim (Yongin, South Korea) and Hee Won Suh (Suwon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of the present disclosure provides a resistive switching memory device including: a lower electrode; an amorphous metal oxide-based first active layer positioned on the lower electrode; an amorphous metal oxide-based second active layer positioned on the first acti...