ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,762, issued on Sept. 1, was assigned to Research & Business Foundation Sungkyunkwan University (Gyeonggi-Do, South Korea) and IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) (Seoul, South Korea).

"Method for etching atomic layer" was invented by Geun Young Yeom (Seoul, South Korea), Chin Wook Chung (Seoul, South Korea), Yun Jong Jang (Seoul, South Korea), Doo San Kim (Suwon-si, South Korea), Ye Eun Kim (Suwon-si, South Korea), Hong Seong Gil (Suwon-si, South Korea), Hae In Kwon (Suwon-si, South Korea), Jun Young Park (Goyang-si, South Korea) and Ji Won Jung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "P...