US Patent Issued to Renesas Electronics on Sept. 22 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,417, issued on Sept. 22, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yotaro Goto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor substrate, an n-type source region, an n-type drain region, a first p-type semiconductor region, and a second p-type semiconductor region surrounding the n-type source region and the first p-type semiconductor region are formed. A gate electrode is formed on the semiconductor substrate between the n-type source region and the n-type drain region via a dielectric film GF. In the semiconductor substrate, a recessed po...