US Patent Issued to Renesas Electronics on Oct. 27 for "Semiconductor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,640, issued on Oct. 27, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Shinji Inoue (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device capable of shortening an erasing time and suppressing deterioration of retention characteristics is provided. A semiconductor device includes: a semiconductor substrate having a main surface; a gate insulating film formed on the main surface; and a gate electrode formed on the gate insulating film. The gate insulating film includes a first silicon nitride film, and a first silicon oxide film arranged between the ...