US Patent Issued to Renesas Electronics on May 26 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,820, issued on May 26, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yuji Enari (Tokyo) and Takashi Tonegawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interlayer insulating film is formed on an upper surface of a semiconductor substrate. A source pad and a kelvin pad, a gate pad, and a drain pad each having a smaller plane area than a plane area of the source pad are formed on the interlayer insulating film. A first plating layer is formed on the source pad. A second plating layer is formed on each of the kelvin pad, the gate pad, and the drain pad. A mate...