US Patent Issued to Renesas Electronics on May 12 for "Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,408, issued on May 12, was assigned to Renesas Electronics Corp. (Tokyo).

"Metal film and manufacturing method of the metal film, and semiconductor device and method of manufacturing the semiconductor device" was invented by Tadashi Yamaguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding. The Metal film has first metal crystal grains, and the second metal crystal grains. Each of the first metal crystal grains has dislocations. Each of the ...