ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,675, issued on March 17, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device" was invented by Nao Nagata (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An IGBT includes first and second trenches arranged side by side on a front surface of a semiconductor substrate, a collector region formed on a back surface side of the semiconductor substrate, a body region and an emitter region provided between the first and second trenches, a first trench gate electrode provided in the first trench, a second trench gate electrode provided in the second trench, a third trench gate electrode provided below the first trench gate electrod...