ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,814, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Takuho Kamada (Tokyo), Koji Ogata (Tokyo) and Kiyoyuki Satou (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an n-type semiconductor substrate, a trench, and a gate electrode formed in the trench via a gate insulating film. An absolute value of a difference between a thickness of the gate insulating film formed on a corner portion of the trench and a thickness of the gate insulating film formed on the bottom portion of the trench is smaller than an absolute value of...