US Patent Issued to Renesas Electronics on June 9 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,831, issued on June 9, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device" was invented by Yuta Nabuchi (Tokyo) and Akihiro Shimomura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An improved power MOSFET having a super junction structure is disclosed. The improved power MOSFET includes a plurality of unit cells UC, and each of the plurality of unit cells UC includes a column region PC1, a column region PC2, a pair of trenches TR formed between the column regions PC1 and PC2 in the X-direction and a pair of gate electrodes GE formed in the pair of trenches TR via gate insulating films (GI). The pair of trenches TR and th...