ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,676, issued on June 23, was assigned to Renesas Electronics Corp. (Tokyo).
"Method of manufacturing semiconductor device" was invented by Takahiro Maruyama (Tokyo), Toshiya Saito (Tokyo) and Takuya Maruyama (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A first conductive pattern is formed on a semiconductor substrate and formed from a first conductive film. A second conductive film having a first portion on the semiconductor substrate, a second portion on an upper surface of the first conductive pattern, and a third portion connecting the first portion and the second portion so as to cover a side surface of the first conductive pattern, is f...