US Patent Issued to Renesas Electronics on June 16 for "Method of manufacturing semiconductor device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,644, issued on June 16, was assigned to Renesas Electronics Corp. (Tokyo).

"Method of manufacturing semiconductor device and semiconductor device" was invented by Noriko Numata (Tokyo), Koichi Hasegawa (Tokyo) and Tatsuaki Tsukuda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A source pad electrically coupled with a source of a MOSFET of a semiconductor chip and located at a position below a lead in cross-sectional view is electrically connected with the lead for source via a conductive member bonded to the source pad and a wire bonded to the conductive member."

The patent was filed on April 26, 2023, under Application No. 18/307,394.

*For...