ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,273, issued on June 16, was assigned to Renesas Electronics Corp. (Tokyo).
"Method of manufacturing semiconductor device" was invented by Yu Nagahama (Tokyo) and Yuya Abiko (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A trench is formed in a semiconductor substrate. A first silicon oxide film is formed in an inside of the trench. A poly-crystalline silicon film is formed on the first silicon oxide film. A second silicon oxide film is formed from the poly-crystalline silicon film by performing a thermal oxidation treatment to the poly-crystalline silicon film. Thus, an insulating film including the first silicon oxide film and the second sil...