US Patent Issued to Renesas Electronics on July 21 for "Semiconductor device and testing method for memory circuit" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,903, issued on July 21, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and testing method for memory circuit" was invented by Shunya Nagata (Tokyo) and Jun Matsushima (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an SRAM circuit mounted in a semiconductor device, power supply voltage reduction circuits generate reduction voltage obtained by reducing an external power supply voltage. A first power supply voltage selection circuit selects one of the external power supply voltage and the reduction voltage as a drive voltage supplied to a word line driver. A second power supply voltage selection circuit selects one o...