ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,503, issued on July 21, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Tomohiro Nishiyama (Tokyo), Toshiyuki Hata (Tokyo) and Tatsuaki Tsukuda (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Improving a performance of a semiconductor device. A method of manufacturing the semiconductor device, including steps of: forming a first convex portion on a front surface of a chip mounting portion; and mounting a semiconductor chip on the front surface of the chip mounting portion via a conductive adhesive material. Here, the semiconductor chip includes: a main transistor fo...