US Patent Issued to Renesas Electronics on July 21 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,441, issued on July 21, was assigned to Renesas Electronics Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Hiroshi Yanagigawa (Tokyo), Hideki Niwayama (Tokyo), Hiroyoshi Kudou (Tokyo), Kazuhisa Mori (Tokyo) and Kodai Wada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor substrate SUB, a trench TR is formed. A gate-electrode GE1 is formed inside the trench TR via a gate insulating film GI1. A body region PB, a well region PW1 and a well region NW1 are formed. A source-region NS is formed in the body-region PB. In the well region PW1, an n-type source region and an n-type drain region...