US Patent Issued to RENESAS ELECTRONICS on Feb. 24 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,771, issued on Feb. 24, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Yuta Nabuchi (Tokyo), Hiroshi Yanagigawa (Tokyo), Katsumi Eikyu (Tokyo) and Atsushi Sakai (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing the same capable of ensuring a sufficient breakdown voltage near a terminal end portion of a cell portion are provided. The cell portion includes a first cell column region and a second cell column region adjacent to each other, and a first cell trench gate and a second cell trench gate arranged between the ...