US Patent Issued to RENESAS ELECTRONICS on Feb. 17 for "Semiconductor device with top wiring covered by multiple passivation films to prevent cracking and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,624, issued on Feb. 17, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).

"Semiconductor device with top wiring covered by multiple passivation films to prevent cracking and method of manufacturing the same" was invented by Tatsuya Usami (Tokyo), Yoshiki Maruyama (Tokyo), Yuki Murayama (Tokyo) and Yuji Ishii (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate having first and second main surfaces; interlayer insulating films laminated on the first main surface in a thickness direction from the second main surface toward the first main surface; a top wiring arranged on a top interlayer ins...