ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,336, issued on Feb. 17, was assigned to RENESAS ELECTRONICS Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Tomoya Nishimura (Tokyo), Atsushi Sakai (Tokyo) and Katsumi Eikyu (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A first trench extending in a Y direction is formed in each of a semiconductor substrate located in a cell region and the semiconductor substrate located in an outer peripheral region. A second trench is formed in the semiconductor substrate in the outer peripheral region so as to surround the cell region in a plan view. A p-type body region is formed in the semiconductor substrate i...