ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,663, issued on Aug. 11, was assigned to Renesas Electronics Corp. (Tokyo).
"Semiconductor device and method of manufacturing the same" was invented by Ryota Kuroda (Tokyo) and Hitoshi Matsuura (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a trench formed in an element formation region of a semiconductor substrate, an insulating film formed on an inner wall of the trench, a p-type semiconductor portion embedded in a part of the trench via the insulating film, and an n-type semiconductor portion embedded in another part of the trench via the insulating film and provided so as to contact with the p-type semicondu...