US Patent Issued to Renesas Electronics Corportaion on Aug. 25 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,797, issued on Aug. 25, was assigned to Renesas Electronics Corportaion (Tokyo).

"Semiconductor device" was invented by Takahiro Mori (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a p-type substrate region of a semiconductor substrate, an n-type source region, an n-type drain region, a p-type body region having an impurity concentration higher than an impurity concentration of the p-type substrate region, a p-type body contact region having an impurity concentration higher than the impurity concentration of the p-type body region, and an n-type drift region having an impurity concentration lower than an impurity concentration of the n-typ...