ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,807, issued on Nov. 3, was assigned to REALTEK SEMICONDUCTOR Corp. (Hsinchu, Taiwan).
"Memory signal calibration apparatus and method" was invented by Kuo-Wei Chi (Hsinchu, Taiwan), Chun-Chi Yu (Hsinchu, Taiwan) and Shih-Chang Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a memory signal calibration apparatus and a memory signal calibration method. A gating circuit generates a data strobe enablement setting signal according to a setting control signal, generates an enabling state of the data strobe enablement signal and performs gating on a data strobe signal according to the enabling state to g...