US Patent Issued to REALTEK SEMICONDUCTOR on June 30 for "Exposure control method applicable to exposure fusion" (Chinese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,671,908, issued on June 30, was assigned to REALTEK SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Exposure control method applicable to exposure fusion" was invented by Xiao-Yu Chen (Suzhou, China), Gang Shen (Suzhou, China), Yang Lu (Suzhou, China) and Dong-Yu He (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exposure control method includes: calculating a long-exposure brightness mean value of pixels of darker (N-X) kinds of brightness among N kinds of brightness values of a long exposure image, wherein a total number of pixels of brightest X kinds of brightness values among the N kinds of brightness values is a long-exposure bright pixel ...