US Patent Issued to RAYTHEON TECHNOLOGIES on Aug. 11 for "Segmented transistor active region for enhanced thermal conductivity" (Connecticut Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,685, issued on Aug. 11, was assigned to RAYTHEON TECHNOLOGIES Corp. (Arlington, Va.).

"Segmented transistor active region for enhanced thermal conductivity" was invented by Caroline Reilly (Chapel Hill, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided and includes a miscut substrate, intermediate layers epitaxially grown on the miscut substrate such that an uppermost surface of the intermediate layers includes surface steps, segmented active regions including nanowire channels, each of which is epitaxially grown on a corresponding one of the surface steps and a cap layer epitaxially grown on the nanowire channe...