US Patent Issued to Raytheon on Sept. 15 for "Method for connecting memory device through HEMP/EMI protected barrier" (Massachusetts Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,622, issued on Sept. 15, was assigned to Raytheon Co. (Arlington, Va.).

"Method for connecting memory device through HEMP/EMI protected barrier" was invented by Ryan William Carley (Hopkinton, Mass.), Michael L. Mcfeeters (Wilmington, Mass.), Kimberly C. Mann (Worcester, Mass.) and John B. Rivera-Poventud (Clinton, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic interface includes a metallic tube that functions as a waveguide below cutoff (WBC). A non-conductive rod inside the metallic tube may be manipulated to engage a connection device to the interface, within a shielded enclosure. The metallic tube defines a locating recess a...