US Patent Issued to Raytheon on March 31 for "Off-state isolation bias circuit for D-mode amplifiers" (Massachusetts Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,673, issued on March 31, was assigned to Raytheon Co. (Arlington, Va.).

"Off-state isolation bias circuit for D-mode amplifiers" was invented by John P. Bettencourt (Boxford, Mass.), Joseph Peter Davis (Andover, Mass.) and John C. Tremblay (Lancaster, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit comprises an amplifier and a bias circuit. The amplifier comprises an output transistor comprising a source electrode, a drain electrode, and a gate electrode. The bias circuit comprises: a first control loop configured to set a first quiescent bias for the output transistor based on a first value of a first control voltage and a second va...