US Patent Issued to Quanzhou Sanan Semiconductor Technology on May 19 for "Light-emitting device" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,293, issued on May 19, was assigned to Quanzhou Sanan Semiconductor Technology Co. Ltd. (Quanzhou, China).

"Light-emitting device" was invented by Yanbin Feng (Xiamen, China), Wenhao Gao (Xiamen, China), Qian Liang (Xiamen, China) and Chaoyu Wu (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first current spreading layer, a Inx1Ga1-x1As layer, a first cladding layer, an active layer and a second cladding layer disposed sequentially in such order from the first surface to the second surface, wherein, in ...