US Patent Issued to Quanzhou Sanan Semiconductor Technology on July 21 for "Epitaxial structure of semiconductor light-emitting element, semiconductor light-emitting element, and light-emitting device" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,297, issued on July 21, was assigned to Quanzhou Sanan Semiconductor Technology Co. Ltd. (Nanan City, China).

"Epitaxial structure of semiconductor light-emitting element, semiconductor light-emitting element, and light-emitting device" was invented by Meng-Hsin Yeh (Xiamen, China), Zhousheng Jiang (Nanan City, China), Bing-Yang Chen (Xiamen, China), Dongpo Chen (Tianjin, China) and Chung-Ying Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial structure of a semiconductor light-emitting element includes an n-type layer, a V-pit control layer, a light-emitting layer, and a p-type layer stacked from bottom to top. The lig...