US Patent Issued to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY on Feb. 24 for "Light emitting diode device and light emitting apparatus" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,869, issued on Feb. 24, was assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY Co. LTD. (Nanan City, China).

"Light emitting diode device and light emitting apparatus" was invented by Linhua Cao (Xiamen, China), Wanjun Chen (Xiamen, China), Huining Wang (Xiamen, China), Heying Tang (Xiamen, China), Chunlan He (Xiamen, China), Lili Jiang (Xiamen, China), Liming Zhang (Xiamen, China), Renlong Yang (Xiamen, China) and Chung-Ying Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode device includes an epitaxial layered structure and first and second electrodes that are disposed on the epitaxial layered structure. Th...