US Patent Issued to QUALCOMM on May 5 for "Memory with reduced leakage through analog head switch control" (American, Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,421, issued on May 5, was assigned to QUALCOMM Inc. (San Diego).

"Memory with reduced leakage through analog head switch control" was invented by Seohee Kim (San Diego), Chulmin Jung (San Diego), Xiao Chen (San Diego), Yi-Ju Chen (Toufen, Taiwan), Hanil Lee (San Diego) and Subbarao Palacharla (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is provided that includes an analog gate voltage driver that drives the gate of a head switch transistor for a bitcell array with an analog gate voltage while the bitcell array operates in a light-sleep mode. The analog gate voltage switches the head switch transistor partially on so that the head...