US Patent Issued to QUALCOMM on May 12 for "Three-dimensional (3D) field effect transistors (FETs) with gate cuts to enhance carrier mobility and related fabrication methods" (American, Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,417, issued on May 12, was assigned to QUALCOMM Inc. (San Diego).

"Three-dimensional (3D) field effect transistors (FETs) with gate cuts to enhance carrier mobility and related fabrication methods" was invented by Xia Li (San Diego), Ming-Huei Lin (New Taipei, Taiwan) and Haining Yang (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate cut extending through a gate adjacent to a channel region of a 3D FET causes the gate to exert a first force and a second force in directions orthogonal to each other on the channel region. The gate cut may include a gate cut wall to cause the gate to exert a first force in a first direction on the channel...