US Patent Issued to QUALCOMM on May 12 for "Enhanced-shaped extension region(s) for gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods" (California, North Carolina Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,384, issued on May 12, was assigned to QUALCOMM Inc. (San Diego).

"Enhanced-shaped extension region(s) for gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods" was invented by Peijie Feng (San Diego), Yan Sun (San Diego) and Shreesh Narasimha (Charlotte, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Enhanced-shaped extension region for gate-all-around (GAA) field-effect transistor (FET) devices and related fabrication methods are disclosed. The GAA FET device includes an extension region of semiconductor material coupled from the respective channel to the source/drain region to facilitate forming a conduc...