US Patent Issued to QUALCOMM on June 23 for "Memory with double redundancy" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,020, issued on June 23, was assigned to QUALCOMM Inc. (San Diego).

"Memory with double redundancy" was invented by Dhvani Sheth (San Diego), Hochul Lee (Los Angeles), Anil Chowdary Kota (San Diego) and Chulmin Jung (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is provided with a plurality of column groups and two redundant column groups. If there are two defective columns in the plurality of column groups, the plurality of column groups may be divided into a no-shift region, a one-shift region, and a two-shift region. The memory includes a plurality of input/output circuits corresponding to the plurality of column groups. Each i...