US Patent Issued to QUALCOMM Incorproated on Nov. 3 for "Gate-all-around (GAA) nanosheet device having inner gate spacer with rounded edges" (American, Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,365, issued on Nov. 3, was assigned to QUALCOMM Incorproated (San Diego).

"Gate-all-around (GAA) nanosheet device having inner gate spacer with rounded edges" was invented by Xia Li (San Diego), Junjing Bao (San Diego) and Biswa Ranjan Panda (Bangaluru, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device having one or more Gate-All-Around GAA transistors is disclosed. At least one of the one or more GAA transistors comprises one or more inner gate structures having a work function metal bounded by a gate dielectric; and one or more inner gate spacers associated with the one or more inner gate structures, wherein each of the one ...